? 2008 ixys all rights reserved 1 - 6 20081126f gwm 120-0075p3 ixys reserves the right to change limits, test conditions and dimensions. v dss = 75 v i d25 = 118 a r dson typ. = 3.7 mw three phase full bridge with trench mosfets in dcb isolated high current package s2 l- l1 l2 l3 g2 s1 g1 s3 g3 s4 g4 s5 g5 s6 g6 l+ symbol conditions characteristic values (t vj = 25 c, unless otherwise specifed) min. typ. max. r dson on chip level at t vj = 25c v gs = 10 v ; i d = 60 a t vj = 125c 3.7 8.4 5.5 mw mw v gs(th) v ds = 20 v; i d = 1 ma 2 4 v i dss v ds = v dss ; v gs = 0 v t vj = 25c t vj = 125c 0.1 1 a ma i gss v gs = 20 v; v ds = 0 v 0.2 a q g q gs q gd v gs = 10 v; v ds = 55 v; i d = 125 a 100 19 28 nc nc nc t d(on) t r t d(off) t f v gs = 10 v; v ds = 30 v i d = 80 a; r g = 39 ? inductive load 80 80 510 100 ns ns ns ns e on e off e recoff 0.12 0.40 0.02 mj mj mj r thjc r thjh with heat transfer paste (ixys test setup) 1.3 1.0 1.6 k/w k/w mosfets symbol conditions maximum ratings v dss t vj = 25c to 150c 75 v v gs 20 v i d25 i d90 t c = 25c t c = 90c 118 85 a a i f25 i f90 t c = 25c (diode) t c = 90c (diode) 120 78 a a surface mount device straight leads bent leads applications ac drives ? in automobiles - electric power steering - starter generator ? in industrial vehicles - propulsion drives - fork lift drives ? in battery supplied equipment features ? mosfets in trench technology: - low rdson - optimized intrinsic reverse diode ? package: - high level of integration - high current capability 300 a max. - aux. terminals for mosfet control - terminals for soldering or welding connections - isolated dcb ceramic base plate with optimized heat transfer ? space and weight savings package options ? 3 lead forms available - straight leads (sl) - smd lead version (smd) - bent leads (bl)
? 2008 ixys all rights reserved 2 - 6 20081126f gwm 120-0075p3 ixys reserves the right to change limits, test conditions and dimensions. component symbol conditions maximum ratings i rms per pin in main current paths (p+, n-, l1, l2, l3) may be additionally limited by external connections 300 a t vj t stg -55...+175 -55...+125 c c v isol i isol < 1 ma, 50/60 hz, f = 1 minute 1000 v~ f c mounting force with clip 50 - 250 n symbol conditions characteristic values min. typ. max. r pin to chip with heatsink compound 0.6 mw c p coupling capacity between shorted pins and mounting tab in the case 160 pf weight typ. 25 g equivalent circuits for simulation thermal response junction - case (typ.) c th1 = 0.039 j/k; r th1 = 0.28 k/w c th2 = 0.069 j/k; r th2 = 0.57 k/w p v t j r t h1 r t h2 c t h2 c t h1 t c source-drain diode symbol conditions characteristic values (t j = 25c, unless otherwise specifed) min. typ. max. v sd (diode) i f = 60 a; v gs = 0 v 0.9 1.2 v t rr q rm i rm i f = 80 a; -di f /dt = 800 a/s; v r = 30 v 70 1.1 30 ns c a
? 2008 ixys all rights reserved 3 - 6 20081126f gwm 120-0075p3 ixys reserves the right to change limits, test conditions and dimensions. s traight l eads gwm 120-0075p3-sl g1 s1 g2 s2 g3 s3 g4 s4 g5 s5 g6 s6 l+ l- l1 l2 l3 b ent l eads gwm 120-0075p3-bl g1 s1 g2 s2 g3 s3 g4 s4 g5 s5 g6 s6 l+ l- l1 l2 l3 s urface m ount d evice gwm 120-0075p3-smd g1 s1 g2 s2 g3 s3 g4 s4 g5 s5 g6 s6 l+ l- l1 l2 l3 leads ordering part name & packing unit marking part marking delivering mode base qty. ordering code straight standard gwm 120-0075p3 - sl gwm 120-0075p3 blister 36 502 843 smd standard gwm 120-0075p3 - smd gwm 120-0075p3 blister 36 502 850 bent standard gwm 120-0075p3 - bl gwm 120-0075p3 blister 36 contact factory
? 2008 ixys all rights reserved 4 - 6 20081126f gwm 120-0075p3 ixys reserves the right to change limits, test conditions and dimensions. -25 0 25 50 75 100 125 150 0.5 1.0 1.5 2.0 2.5 0.0 1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0 v ds [v] 0123456 i d [a] 0 50 100 150 200 250 300 v ds [v] 0123456 i d [a] 0 50 100 150 200 250 300 v gs [v] 01234567 i d - [a] 0 50 100 150 200 250 6 v 5.5 v 7 v -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 t j [c] t j = 25c t j = 125c 4.5 v 4 v t j = 25c 7 v 6.5 v 6 v 4 v i d [a] 0 50 100 150 200 250 300 r ds(on) - normalized 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 v 15 v t j = 125c i dss = 0.25 ma t j = 125c v ds = 30 v 5 v 5.5 v 5 v 6.5 v r ds(on) normalized r ds(on) r ds(on) [m ] v ge = 10 v i d = 125 a t j [c] 4 v 4.5 v 5.5 v 5 v 6 v 6.5 v 7 v v gs = 10 v i d = 125 a 20 v 4.5 v 10 v v gs = 20 v 15 v v gs = 20 v 15 v 10 v v dss [v] normalized r ds(on) normalized fig. 1 drain source breakdown voltage v dss vs. junction temperature t vj fig. 2 typical transfer characteristic fig. 3 typical output characteristic fig. 4 typical output characteristic fig. 5 drain source on-state resistance r ds(on) versus junction temperature t j fig. 6 drain source on-state resistance r ds(on) versus i d
? 2008 ixys all rights reserved 5 - 6 20081126f gwm 120-0075p3 ixys reserves the right to change limits, test conditions and dimensions. e on q g [nc] 0 20 40 60 80 100 120 i d - [a] 0 2 4 6 8 10 12 14 t d(on) t r v gs [v] e rec(off) 0 20 40 60 80 100 120 140 0.00 0.04 0.08 0.12 0.16 0.20 0 25 50 75 100 125 0 20 40 60 80 100 120 140 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 100 200 300 400 500 600 700 800 0 20 40 60 80 100 120 0.00 0.15 0.30 0.45 0.60 0.75 0 50 100 150 200 250 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 200 400 600 800 1000 1200 1400 1600 t j [c] 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 e on e on , e rec(off) [mj] i d [a] i d [a] t [ns] e off t f t d(off) t [ns] e rec(off) t d(on) t r r g [ ] e off [mj] t [ns] r g [ ] e off t d(off) t f e off [mj] i d = 125 a t j = 25c v ds = 15 v v ds = 55 v v ds = 30 v v gs = +10/0 v r g = 39 t j = 125c v ds = 30 v v gs = +10/0 v r g = 39 t j = 125c e on , e rec(off) [mj] t [ns] v ds = 30 v v gs = +10/0 v i d = 125 a t j = 125c v ds = 30 v v gs = +10/0 v i d = 125 a t j = 125c fig.7 gate charge characteristic fig. 8 drain current i d vs. case temperature t c fig. 9 typ. turn-on energy & switching times vs. collector current, inductive switching fig. 10 typ. turn-off energy & switching times vs. collector current, inductive switching fig. 11 typ. turn-on energy & switching times vs. gate resistor, inductive switching fig. 12 typ. turn-off energy & switching times vs. gate resistor, inductive switching
? 2008 ixys all rights reserved 6 - 6 20081126f gwm 120-0075p3 ixys reserves the right to change limits, test conditions and dimensions. -di f /dt [a/s] 400 800 1200 1600 i rm [a] 15 20 25 30 35 40 45 50 -di f /dt [a/s] 400 600 800 1000 1200 1400 1600 t rr [ns] 50 55 60 65 70 75 80 v sd [v] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i s [a] 0 50 100 150 200 250 300 -di f /dt [a/s] 400 800 1200 1600 qrr [c] 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t j = -25c 25c 125c 150c time [ms] 1 10 100 1000 10000 thermal response [k/w] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v r = 30 v t vj = 125c 40 a 80a 125 a 40 a 80 a 125 a v r = 30 v t vj = 125c v r = 30 v t vj = 125c 40 a 80a 125 a gwm 120-0075p3 fig. 13 reverse recovery time t rr of the body diode vs. di/dt fig. 14 reverse recovery current i rm of the body diode vs. di/dt fig. 15 reverse recovery charge q rr of the body diode vs. di/dt fig. 16 source current i s vs. source drain voltage v sd (body diode) fig. 17 defnition of switching times fig. 18 typ. therm. impedance junction to heatsink z thjc v gs 0 , 1 v gs 0 , 9 v gs t t v ds i d 0 , 1 i d 0 , 9 i d 0 , 1 i d t d ( on ) t r t f t d ( o ff ) 0 , 9 i d
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